1 AM1960NE analog power preliminary publication order number: ds-AM1960NE_a these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units t <= 5 sec 415 steady-state 460 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja esd protected 2000v sc70-6 top view d1 g2 s2 s1 g1 d2 1 2 3 6 5 4 n-channel mosfet n-channel mosfet d 1 g 1 s 1 d 2 g 2 s 2 n-channel 60-v (d-s) mosfet v ds (v) r ds(on) ( ? )i d (a) 2.0 @ v gs = 4.5v 0.32 3.0 @ v gs = 2.5v 0.26 60 product summary symbol maximum units v ds 60 v gs 20 t a =25 o c 0.32 t a =70 o c 0.26 i dm 0.7 i s 0.25 a t a =25 o c 0.3 t a =70 o c 0.21 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a
2 AM1960NE analog power preliminary publication order number: ds-AM1960NE_a analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liabi lity arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or spec ifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals? must be validated for e ach customer application by customer?s technical experts. apl does not conv ey any license under its patent ri ghts nor the rights of others. apl products are not designed, intended, or authorized for use as components in system s intended for surgical implant into the body, or othe r applications intended to support or sustain life, or fo r any other application in which the failur e of the apl product could create a situat ion where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buye r shall indemnify and hold apl and its officers, employees, subsid iaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the pa rt. apl is an equal opportunity/affirmative action employer. notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = 250 ua 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 10 ua v ds = 48 v, v gs = 0 v 1 v ds = 48 v, v gs = 0 v, t j = 55 o c 50 on-state drain current a i d ( on ) v ds = 5 v, v gs = 10 v 0.3 a v gs = 10 v, i d = 0.3 a 2 v gs = 4.5 v, i d = 0.2 a 3 forward tranconductance a g fs v ds = 4.5 v, i d = 0.3 a 8 s diode forward voltage v sd i s = 0.2 a, v gs = 0 v 1.10 v total gate charge q g 0.4 gate-source charge q g s 0.1 gate-drain charge q g d 0.1 turn-on delay time t d ( on ) 10 rise time t r 6 turn-off delay time t d ( off ) 20 fall-time t f 3 ? parameter limits unit v dd = 10 v, r l = 30 ? , i d = 0.3 a, v gen = 10 v v ds = 10 v, v gs = 5 v, i d = 0.3 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on)
3 AM1960NE analog power preliminary publication order number: ds-AM1960NE_a package information sc-70: 6lead
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